VSMB1940X01 www.vishay.com vishay semiconductors rev. 1.4, 02-may-13 1 document number: 81933 for technical questions, contact: emittertechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 high speed infrared emitting diode, 940 nm, gaalas double hetero description VSMB1940X01 is an infrared, 940 nm emitting diode in gaalas double hetero technol ogy with high radiant power and high speed, molded in clear, untinted 0805 plastic package for surface mounting (smd). features ? package type: surface mount ? package form: 0805 ? dimensions (l x w x h in mm): 2 x 1.25 x 0.85 ? aec-q101 qualified ? peak wavelength: ? p = 940 nm ? high reliability ? high radiant power ? high radiant intensity ? high speed ? angle of half sensitivity: ? = 60 ? low forward voltage ? suitable for high pulse current operation ? 0805 standard surface-mountable package ? floor life: 168 h, msl 3, acc. j-std-020 ? lead (pb)-free re flow soldering ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 applications ? high speed ir data transmission ? high power emitter for low space applications ? high performance transmissi ve or reflective sensors note ? test conditions see table basic characteristics note ? moq: minimum order quantity 21531 product summary component i e (mw/sr) ? (deg) ? p (nm) t r (ns) VSMB1940X01 6 60 940 15 ordering information ordering code packaging remarks package form VSMB1940X01 tape and reel moq: 3000 pcs, 3000 pcs/reel 0805 absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit reverse voltage v r 5v forward current i f 100 ma peak forward current t p /t = 0.1, t p = 100 s i fm 200 ma surge forward current t p = 100 s i fsm 1a power di ssipation p v 160 mw junction temperature t j 100 c operating temperature range t amb - 40 to + 85 c storage temperature range t stg - 40 to + 100 c soldering temperature t ? 5 s, 2 mm from case t sd 260 c thermal resistance junction/ambient j- std-051, leads 7 mm, soldered on pcb r thja 270 k/w
VSMB1940X01 www.vishay.com vishay semiconductors rev. 1.4, 02-may-13 2 document number: 81933 for technical questions, contact: emittertechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - power dissipat ion limit vs. ambient temperature fig. 2 - fo rward current limit vs. ambient temperature 21532 t amb - ambient temperature (c) p v - power dissipation (mw) 0 20 40 60 80 100 120 140 160 180 0 102030405060708090100 r thja = 270 k/w 21533 t amb - ambient temperature (c) i f - forward current (ma) 0 20 40 60 80 100 120 020406080100 r thja = 270 k/w basic characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol min. typ. max. unit forward voltage i f = 100 ma, t p = 20 ms v f 1.15 1.35 1.6 v i f = 1 a, t p = 100 s v f 2.2 v temperature coefficient of v f i f = 1 ma tk vf - 1.5 mv/k i f = 100 ma tk vf - 1.1 mv/k reverse current v r = 5 v i r 10 a junction capacitance v r = 0 v, f = 1 mhz, e = 0 mw/cm 2 c j 70 pf radiant intensity i f = 100 ma, t p = 20 ms i e 3612mw/sr i f = 1 a, t p = 100 s i e 60 mw/sr radiant power i f = 100 ma, t p = 20 ms ? e40mw temperature coefficient of radiant power i f = 1 ma tk ? e - 1.1 %/k i f = 100 ma tk ? e - 0.51 %/k angle of half intensity ? 60 deg peak wavelength i f = 30 ma ? p 940 nm spectral bandwidth i f = 30 ma ?? 25 nm temperature coefficient of ? p i f = 30 ma tk ? p 0.25 nm rise time i f = 100 ma, 20 % to 80 % t r 15 ns fall time i f = 100 ma, 20 % to 80 % t f 15 ns virtual source diameter d 0.5 mm
VSMB1940X01 www.vishay.com vishay semiconductors rev. 1.4, 02-may-13 3 document number: 81933 for technical questions, contact: emittertechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 basic characteristics (t amb = 25 c, unless otherwise specified) fig. 3 - forward current vs. forward voltage fig. 4 - relative forward voltage vs. ambient temperature fig. 5 - radiant intensity vs. forward current fig. 6 - relative radiant in tensity vs. ambient temperature fig. 7 - relative radiant power vs. wavelength fig. 8 - relative radiant in tensity vs. angular displacement 1 10 100 1000 01 23 t p = 100 s t p /t= 0.001 v f - forward voltage (v) 21534 i f - forward current (ma) 90 92 94 96 98 100 102 104 106 108 110 - 40 - 20 0 20 40 60 80 100 t amb - ambient temperature (c) v f, rel - relative forward voltage (%) i f = 100 ma i f = 10 ma i f = 1 ma 21443 t p = 20 ms 0.01 0.1 1 10 100 1 10 100 1000 20921 i f - forward pulse current (ma) i e - radiant intensity (mw/sr) t p = 1 s 40 60 80 100 120 140 160 180 - 60 - 40 - 20 0 20 40 60 80 100 t amb - ambient temperature (c) i e rel - relative radiant intensity (%) t p = 20 ms i f = 1 ma 21444 i f = 100 ma 0 10 20 30 40 50 60 70 80 90 100 840 880 920 960 1000 1040 - wavelength (nm) 21445 e rel - relative radiant power (%) i f = 30 ma 0.4 0.2 0 i e, rel - relative radiant intensity 0.6 0.9 0.8 0 30 10 20 40 50 60 70 80 0.7 1.0 ? - angular displacement 948013-1
VSMB1940X01 www.vishay.com vishay semiconductors rev. 1.4, 02-may-13 4 document number: 81933 for technical questions, contact: emittertechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 reflow solder profile fig. 9 - lead (pb)-free reflow solder profile acc. j-std-020 drypack devices are packed in moistu re barrier bags (mbb) to prevent the products from mo isture absorption during transportation and storage. each bag contains a desiccant. floor life time between soldering and re moving from mbb must not exceed the time indicated in j-std-020: ? moisture sensitivity: level 3 ? floor life: 168 h ? conditions: t amb < 30 c, rh < 60 % drying in case of moisture absorpt ion devices should be baked before soldering. conditions see j-std-020 or label. devices taped on reel dry us ing recommended conditions 192 h at 40 c (+ 5 c), rh < 5 %. package dimensions in millimeters 0 50 100 150 200 250 300 0 50 100 150 200 250 300 time (s) temperature (c) 240 c 245 c max. 260 c max. 120 s max. 100 s 217 c max. 30 s max. ramp up 3 c/s max. ramp down 6 c/s 19841 255 c 20018
VSMB1940X01 www.vishay.com vishay semiconductors rev. 1.4, 02-may-13 5 document number: 81933 for technical questions, contact: emittertechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 blister tape dimensions in millimeters 21501
VSMB1940X01 www.vishay.com vishay semiconductors rev. 1.4, 02-may-13 6 document number: 81933 for technical questions, contact: emittertechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 reel dimensions in millimeters of the wheel i s s upplier s pecific. form of the leave open i ss ue: 2; 26.04.10 drawing-no.: 9.800-5096.01-4 s pecification s according to din technical drawing s ? 177.8 max. ? 55 min. 8.4 +2.5 8.4 +0.15 14.4 max. ? 13 + 0.5 - 0.2 1.5 min. ? 20.2 min. z z 2:1 20875
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